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  Datasheet File OCR Text:
 1N4001GP thru 1N4007GP
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction Rectifier
DO-204AL (DO-41)
1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA.
d* teFeatures aten P
Reverse Voltage 50 to 1000V Forward Current 1.0A
0.205 (5.2) 0.160 (4.1)
(R)
1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA.
NOTE: Lead diameter is 0.026 (0.66)
* Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * High temperature metallurgically bonded construction * Cavity-free glass passivated junction * Capable of meeting environmental standards of MIL-S-19500 * 1.0 Ampere operation at TA = 75C with no thermal runaway * Typical IR less than 0.1A * High temperature soldering guaranteed: 350C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
Case: JEDEC DO-204AL, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 oz., 0.3 g
Ratings at 25C ambient temperature unless otherwise specified.
0.023 (0.58)
for suffix "E" part numbers
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306
Maximum Ratings & Thermal Characteristics
Parameter Maximum repetitive peak reverse voltage * Maximum RMS voltage * Maximum DC blocking voltage * Maximum average forward rectified current 0.375" (9.5mm) lead length at TA = 75C * Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) * Maximum full load reverse current, full cycle average 0.375" (9.5mm) lead length TA = 75C Typical thermal resistance
(Note 1)
1N 1N 1N 1N 1N 1N 1N Symbol 4001GP 4002GP 4003GP 4004GP 4005GP 4006GP 4007GP VRRM VRMS VDC IF(AV) IFSM IR(AV) RJA RJL TJ, TSTG 50 35 50 100 70 100 200 140 200 400 280 400 1.0 30 30 55 25 -65 to +175 600 420 600 800 560 800 1000 700 1000
Unit V V V A A A C/W C
* Operating junction and storage temperature range
Electrical Characteristics
* Maximum DC reverse current at rated DC blocking voltage Typical reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A
Ratings at 25C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 1.0A TA = 25C TA = 125C
VF IR trr CJ
1.1 5.0 50 2.0 8.0
*JEDEC registered values
V A s pF
Typical junction capacitance at 4.0V, 1MHz
Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
Document Number 88504 11-Feb-02
www.vishay.com 1
1N4001GP thru 1N4007GP
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
1.0 30
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Peak Forward Surge Current (A)
TJ = TJmax 8.3ms Single Half Sine-Wave (JEDEC Method)
Average Forward Rectified Current (A)
60HZ Resistive or Inductive Load 0.8
25
0.6
20
0.4
15
0.2 0.375" (9.5mm) Lead Length 0 0 25 50 75 100 125 150 175
10
5.0 1 10 100
Ambient Temperature (C)
Number of Cycles at 60HZ
Fig. 3 - Typical Instantaneous Forward Characteristics
20 10
Fig. 4 - Typical Reverse Characteristics
Instantaneous Reverse Current (A)
TJ = 100C
Instantaneous Forward Current (A)
10
1
TJ = 25C Pulse Width = 300s 1% Duty Cycle
1
0.1
0.1 TJ = 25C
0.01 0.6
0.01 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance
20 100
Fig. 6 - Typical Transient Thermal Impedance
Transient Thermal Impedance (C/W)
TJ = 25C f = 1.0MHZ Vsig = 50mVp-p
Junction Capacitance (pF)
10
10
1
1 0.1
1
10
100
0.1 0.01
0.1
1
10
100
Reverse Voltage (V)
t -- Pulse Duration (sec)
www.vishay.com 2
Document Number 88504 11-Feb-02


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